PART |
Description |
Maker |
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
MA840 MA2C840 |
Variable Capacitance Diodes VHF-UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
|
NXP Semiconductors N.V. Philipss Philips Semiconductors
|
1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
|